Bipolar transistor with protective diode in collector

Details Bipolar transistor with protective diode in collector Bipolar transistor with protective diode in collector

1981-10-13

1985-07-16

James, Andrew J.

357 34, 357 13, H01L 2702

Patent

active

045300003

ABSTRACT:
A semiconductor device, comprising a semiconductor body with a bipolar transistor with a collector zone which is formed by a part of a semiconductor region, a base zone and an emitter zone which is embedded in the base zone. The base zone is connected to a base metallization and the emitter zone is connected to an emitter metallization which comprises an emitter connection electrode. Between the emitter and the collector of the transistor there is connected a diode with a first zone which forms part of the semiconductor region and a second zone which is completely surrounded by the first zone and in projection is completely situated within the emitter connection electrode. This emitter connection electrode is connected to the second zone of the diode.

REFERENCES:
patent: 4078244 (1978-03-01), Bonis
patent: 4288807 (1981-09-01), Enzlin et al.
patent: 4293868 (1981-08-01), Iizuka et al.

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