Bipolar transistor with polysilicon dummy emitter

Details Bipolar transistor with polysilicon dummy emitter Bipolar transistor with polysilicon dummy emitter

1999-01-26

2000-11-28

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Lateral bipolar transistor structure

257559, 257557, 438321, H01L 2900

Patent

active

061539198

ABSTRACT:
A manufacturing method for semiconductor components is disclosed which will allow better precision in the definition of the doped areas of the components and the separation of differently doped areas. A selectively shaped area of, for example, polysilicon, defining the area or areas to be doped, is deposited on the component before the masks are applied. This makes the fitting of the masks less critical, as they only have to be fitted within the area of the polysilicon layer. In this way an accuracy of 0.1 .mu.m or better can be achieved.

REFERENCES:
patent: 4451844 (1984-05-01), Komatsu et al.
patent: 4745080 (1988-05-01), Scovell et al.
patent: 5279978 (1994-01-01), See et al.
patent: 5406113 (1995-04-01), Horie
patent: 5451532 (1995-09-01), Bashir et al.
patent: 5666001 (1997-09-01), Miwa
patent: 5708287 (1998-01-01), Nakagawa et al.

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