Bipolar transistor with particular base structure

Details Bipolar transistor with particular base structure Bipolar transistor with particular base structure

1994-06-29

1996-04-16

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, 257588, H01L 310328, H01L 31072, H01L 27082

Patent

active

055085377

ABSTRACT:
A collector layer of a first electrically conductive type is surrounded by an oxide film for separating elements. A base layer comprising an epitaxial layer of a second electrically conductive type is formed on the collector layer. A polysilicon film of the second electrically conductive type is formed at a first area of a surface of the base layer. An emitter layer of the first electrically conductive type is formed at a second area of a surface of the base layer. A base polysilicon electrode comprising of the second electrically conductive type is formed on the polysilicon film and on the oxide film for separating elements. A sidewall comprising an insulating film is formed over a lateral wall of the base polysilicon electrode and a lateral wall of the polysilicon film. An emitter polysilicon electrode of the first electrically conductive type is formed over the emitter layer and the side wall.

REFERENCES:
patent: 3821779 (1974-06-01), Usuda
patent: 4975381 (1990-12-01), Taka et al.
patent: 5321301 (1994-06-01), Sato et al.
patent: 5323032 (1994-06-01), Sato et al.
F. Sato, H. Takemura, T. Tashiro, H. Hirayama, M. Hiroi, K. Koyama and M. Nakamae, "A `Self-Aligned` Selective MBE Technology For High-Performance Bipolar Transistors", IEDM Technical Digest (1990) pp. 607-610.

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