Bipolar transistor with optimized structure

Details Bipolar transistor with optimized structure Bipolar transistor with optimized structure

1996-07-05

1997-09-16

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257198, 257200, 257201, 257586, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

056683880

ABSTRACT:
A bipolar transistor in which the emitter possesses a double "mesa" structure so as to achieve the maximum avoidance of the phenomena of electron/hole recombinations that have a deleterious effect on the current gain. The double mesa emitter can be made out of an alternation of materials M.sub.I /M.sub.II having different types of behavior with respect to a pair of etching methods. These materials may be GaInP and GaAs.

REFERENCES:
patent: 5041882 (1991-08-01), Katoh
patent: 5194403 (1993-03-01), Delage et al.
patent: 5298439 (1994-03-01), Liu et al.
patent: 5411632 (1995-05-01), Delage et al.
H. Ito, et al. "Compositionally Graded Emitter InGa(As)P/GaAs Heterojunction Bipolar Transistors", Electronics Letters, vol. 30, No. 25, (pp. 2174-2175), Dec. 8, 1994.
G.B. GAO, et al. "Al.sub.x Ga.sub.1-x As/Al.sub.y Ga.sub.1-y As and GaAs Pseudo-Heterojunction Bipolar transistors with Lateral Emitter Resistor", Applied Physics Letters, vol. 62, No. 9, (pp. 994-996), Mar. 1, 1993.

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