Bipolar transistor with MOS-controlled protection for reverse-bi

Details Bipolar transistor with MOS-controlled protection for reverse-bi Bipolar transistor with MOS-controlled protection for reverse-bi

1998-03-30

1999-09-07

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

257339, 257350, 257362, 257370, 257378, 438236, 438316, 438335, H01L 2972

Patent

active

059491280

ABSTRACT:
A bipolar transistor with MOS-controlled protection for a reverse-biased emitter-base junction is disclosed. A bipolar transistor and a MOS transistor are configured with the drain and the gate electrically coupled to the emitter, and the source and body electrically coupled to the base. A reverse-bias at the emitter-base junction, which is less than a breakdown voltage for the emitter-base junction, activates the MOS transistor which substantially reduces the resistance between the emitter and the base. Preferably, a first semiconductor region provides both the drain and the emitter, and a second semiconductor region provides both the body and the base, for reduced surface area on an integrated circuit chip.

REFERENCES:
patent: 5828112 (1998-10-01), Yamaguchi

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