Bipolar transistor with monoatomic base layer between emitter an

Details Bipolar transistor with monoatomic base layer between emitter an Bipolar transistor with monoatomic base layer between emitter an

1994-04-29

1994-12-13

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With base region having specified doping concentration...

257 9, 257 12, 257 20, 257105, 257192, 257280, 257464, 257593, 257604, 257656, 257458, H01L 2972, H01L 4500

Patent

active

053731867

ABSTRACT:
A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A preferred device is a bipolar transistor in which case the Dirac-delta doped p-type layer 38 is directly between n-type collector and emitter layers (32, 33). The bipolar transistor described herein has an extremely low base width and is capable of operating at high frequencies.

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