Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
Patent
1992-01-31
1993-12-28
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With base region having specified doping concentration...
257593, H01L 2972, H01L 21265
Patent
active
052742679
ABSTRACT:
An improved NPN transistor and method of building thereof includes: a P- substrate 50; a N+ buried region 52 provided therein; a N- epitaxial layer 56 deposited onto the N buried region; a P base diffusion region 66 in the N- epi layer; a N+ reach-through region 60 through the N- epi layer to the N+ buried layer to thereby define a collector; a N++ implant or diffusion region 102 provided in the P base diffusion region to thereby define an emitter; and a P++ implant region 74 provided around the N++ emitter implant region which thereby defines the extrinsic base of the transistor, wherein the P++ implant region extends through the P region into the N- epi layer and wherein the P++ implant region extends as close to the N++ emitter implant region as possible without encroaching on the emitter.
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Balconi-Lamica Michael J.
International Business Machines - Corporation
Prenty Mark V.
Romanchik Richard A.
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