Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Patent
1994-10-13
1996-11-05
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
257578, 257579, 257584, H01L 2973, H01L 25331
Patent
active
055720633
ABSTRACT:
A bipolar transistor is provided in which the emitters do not traverse the base but terminate inside the top surface of the base. Each emitter is L-shaped in some embodiments. The base top surface has a polygonal or circular outer boundary. The transistor has a long emitter perimeter available for base current flow and more than two emitter sides (e.g., five sides) available for base current flow. Further, the transistor has a large ratio of the emitter area to the base area. Consequently, the transistor has low noise, high gain, high frequency range, and a small size.
REFERENCES:
patent: 4157561 (1979-06-01), Nawata et al.
patent: 4647958 (1987-03-01), Gardner
patent: 5021856 (1991-06-01), Wheaton
patent: 5139961 (1992-08-01), Solheim
patent: 5169794 (1992-12-01), Iranmanesh
patent: 5219784 (1993-06-01), solheim
patent: 5234847 (1993-08-01), Iranmanesh
W. Burger et al., BCTM Proceedings, BCTM 1990, pp. 78-81.
R. M. Warner, Jr., J. N. Fordemwalt, Integrated Circuits (McGraw-Hill, 1965), pp. 107-109.
E. S. Yang, Fundamentals of Semiconductor Devices (McGraw-Hill, 1978), pp. 241-243.
E. S. Yang, Microelectronic Devices (McGraw-Hill, 1988), pp. 134-135.
R. S. Muller, T. I. Kamins, Device Electronics for Integrated Circuits (Second Edition 1986), pp. 331-335.
A. Iranmanesh, M. Biswal and B. Bastani, Total System Solution with Advanced BiCMOS, Solid State Technology, Jul. 1992, pp. 37-40.
H. F. Cooke, Microwave Transistors: Theory and Design, pp. 68-86, reprinted from Proc. IEEE, vol. 59, Aug. 1971, pp. 1163-1181.
G. Gonzalez, Microwave Transistor Amplifier, (Prentice-Hall 1984), pp. 31-34.
U.S. patent application Ser. No. 07/502,943 filed Apr. 2, 1990, on behalf of V. Ilderem.
U.S. patent application Ser. No. 07/951,524 filed Sep. 25, 1992, on behalf of Ali A. Iranmanesh et al., entitled "Transistors and Methods for Fabrication Thereof".
U.S. patent application Ser. No. 07/991,075 filed Dec. 14, 1992, on behalf of Ali A. Iranmanesh et al., entitled "Transistors and Methods for Fabrication Thereof".
U.S. patent application Ser. No. 08/011,019, filed Jan. 29, 1993, on behalf of Ali A. Iranmanesh, entitled "Transistors and Methods for Fabrication Thereof".
Hardy David B.
Klivans Norman R.
Limanek Robert P.
National Semiconductor Corporation
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