Bipolar transistor with isolation and direct contacts

Details Bipolar transistor with isolation and direct contacts Bipolar transistor with isolation and direct contacts

2007-02-22

2009-11-03

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S343000, C438S353000, C438S354000

Reexamination Certificate

active

07611953

ABSTRACT:
A bipolar transistor has a collector that is contacted directly beneath a base-collector junction by metallization to reduce collector resistance. A conventional reach-through and buried layer, as well as their associated resistance, are eliminated. The transistor is well isolated, nearly eliminating well-to-substrate capacitance and device-to-device leakage current. The structure provides for improved electrical performance, including improved fT, Fmax and drive current.

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