Bipolar transistor with isolation and direct contacts

Details Bipolar transistor with isolation and direct contacts Bipolar transistor with isolation and direct contacts

2007-05-15

2007-05-15

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

C257S565000, C257S621000, C257S698000

Reexamination Certificate

active

10709905

ABSTRACT:
A bipolar transistor has a collector that is contacted directly beneath a base-collector junction by metallization to reduce collector resistance. A conventional reach-through and buried layer, as well as their associated resistance, are eliminated. The transistor is well isolated, nearly eliminating well-to-substrate capacitance and device-to-device leakage current. The structure provides for improved electrical performance, including improved fT, Fmax and drive current.

REFERENCES:
patent: 3676714 (1972-07-01), Wensink et al.
patent: 4870475 (1989-09-01), Endo et al.
patent: 5294823 (1994-03-01), Eklund et al.
patent: 5332920 (1994-07-01), Nakagawa et al.
patent: 5757081 (1998-05-01), Chang et al.
patent: 5767578 (1998-06-01), Chang et al.
patent: 5841197 (1998-11-01), Adamic, Jr.
patent: 6114768 (2000-09-01), Gaul et al.
patent: 6140170 (2000-10-01), Shibib
patent: 6392290 (2002-05-01), Kasem et al.
patent: 6414371 (2002-07-01), Freeman et al.
patent: 6482710 (2002-11-01), Oda et al.

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