Bipolar transistor with increased early voltage

Details Bipolar transistor with increased early voltage Bipolar transistor with increased early voltage

1998-02-02

2000-10-24

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Plural non-isolated transistor structures in same structure

257565, 257571, 257574, 257370, 257378, H01L 27082, H01L 27102, H01L 2970, H01L 3111, H01L 2976

Patent

active

061371548

ABSTRACT:
An improved bipolar transistor (202) has an increased Early voltage and can be integrated on a semiconductor die with MOS transistors (201) and other types of devices to form an integrated circuit (200). A p-type base region (240) is disposed in an n-type collector region (252). An n-type emitter region (244) is disposed within the base region, and a p-type enhancement region (250) is formed to extend under the emitter region to a depth greater than the base depth. The improved bipolar transistor can be fabricated without significantly affecting the operation of other devices on the integrated circuit.

REFERENCES:
patent: 4314267 (1982-02-01), Bergeron et al.
patent: 4694562 (1987-09-01), Iwasaki et al.
patent: 5227654 (1993-07-01), Momose et al.
patent: 5665615 (1997-09-01), Anmo
patent: 5801420 (1998-09-01), Fujishima

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