Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of...
Reexamination Certificate
1999-10-27
2002-05-07
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
C257S565000
Reexamination Certificate
active
06383885
ABSTRACT:
FIELD OF THE INVENTION
This invention relates to bipolar transistors in integrated circuits and, more particularly, to a bipolar transistor with improved collector to emitter breakdown voltage while maintaining a high beta.
BACKGROUND OF THE INVENTION
Advanced automotive, consumer and industrial applications are driving integration of power, Ultra High Voltage Complementary Metal Oxide Semiconductor (UHV CMOS) and bipolar analog functions with microcontrollers and embedded non-volatile memory. Hyperintegration technology (MOTOROLA, INC. technology) is based on a Complementary Metal Oxide Semiconductor (CMOS) platform and integrates power, bipolar devices with EEPROM and flash Electrically Erasable and Programmable Read Only Memory (EEPROM). This technology provides an integrated system solution for automotive electronics applications such as airbags, power window and power seat modules. Bipolar transistors in the Hyperintegration technology are used primarily in the input/output ports and the voltage regulator circuit. However, because of the integration and the reduction in size of the various components, process induced variations in the various components are relatively common. Also, the collector to emitter breakdown voltage (BVCEO) is usually much less than the collector to base breakdown voltage (BVCBO) and it is desirable to have the BVCEO approach or equal the BVCBO.
It is highly desirable to provide apparatus which overcomes these problems by minimizing process induced variations and improving the BVCEO while maintaining efficient area usage and which is inexpensive and easy to install and use.
A primary purpose of the present invention is to integrate a stable, low-cost bipolar transistor in a conventional CMOS process.
REFERENCES:
patent: 5321281 (1994-06-01), Yamaguchi et al.
patent: 5565701 (1996-10-01), Zambrano
patent: 5897355 (1999-04-01), Bulucea et al.
patent: 6137154 (2000-10-01), Capilla
Parris Patrice
Venkatesan Vasudev
Hoang Quoc
King Robert L.
Motorola Inc.
LandOfFree
Bipolar transistor with improved reverse breakdown... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bipolar transistor with improved reverse breakdown..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bipolar transistor with improved reverse breakdown... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2894938