Bipolar transistor with high-low emitter impurity concentration

Details Bipolar transistor with high-low emitter impurity concentration Bipolar transistor with high-low emitter impurity concentration

1977-05-23

1979-01-23

Clawson, Jr., Joseph E.

357 40, 357 89, 357 90, H01L 2972

Patent

active

041363531

ABSTRACT:
An improved bipolar transistor including an emitter region having a relatively high-impurity-concentration portion separated from the base region of the transistor by a significantly lower-impurity-concentration portion disposed therebetween comprises a graded impurity concentration in the low-impurity-concentration portion with the lowest-impurity-concentration section thereof being disposed adjacent the base region.

REFERENCES:
patent: 3943554 (1976-03-01), Russell et al.
patent: 4039857 (1947-08-01), Ahmed
patent: 4049478 (1977-09-01), Ghosh et al.
H. Yagi et al., "A Novel and High Performance Bipolar Device of Low Emitter Impurity Concentration Structure," J. Japan Soc. App. Phys., vol. 44, 1975, pp. 279-283.
V. Hinrichs, "Die Planartechnik bei Transistoren und Integrierten Schaltungen," Scientia Electrica, vol. X, #4, 1964, pp. 97-122.
M. Joshi et al., "Phosphorous Emitter Diffusion, "IBM Tech. Discl. Bull., vol. 13, #5, Oct. 1970, pp. 1066, 1067.

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