Bipolar transistor with high efficient emitter

Details Bipolar transistor with high efficient emitter Bipolar transistor with high efficient emitter

1989-06-19

1991-07-02

Jackson, Jr., Jerome

357 65, 357 2, H01L 2972, H01L 2348, H01L 2940

Patent

active

050289730

ABSTRACT:
A bipolar transistor structure having single crystal emitter, base and collector regions a first emitter contact layer of a higher bandgap than the single crystal and polycrystalline forms of the semiconductor material which forms the emitter and of the same conductivity type as the emitter, and a second emitter contact layer of a substantially polycrystalline form of the semiconductor material and of the same conductivity type as the emitter, on the first emitter contact layer. The higher bandgap first emitter contact layer serves as a barrier for the minority carriers, thus enhancing the emitter efficiency.

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