Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Reexamination Certificate
2006-10-17
2006-10-17
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
C257S578000, C257S573000, C257S575000
Reexamination Certificate
active
07122879
ABSTRACT:
A bipolar transistor with very high dynamic performance, usable in an integrated circuit. The bipolar transistor has a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy.
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Chantre Alain
Chevalier Pascal
Martinet Bertrand
Marty Michel
Jorgenson Lisa K.
Morris James H.
Nguyen Cuong
STMicroelectronics S.A.
Wolf Greenfield & Sacks P.C.
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