Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Plural non-isolated transistor structures in same structure
Reexamination Certificate
2007-08-07
2007-08-07
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Plural non-isolated transistor structures in same structure
C257S566000, C257S578000, C257S583000, C257S591000, C257S592000
Reexamination Certificate
active
10885250
ABSTRACT:
The present invention is generally directed to bipolar transistors with geometry optimized for device performance and various methods of making same. In one illustrative embodiment, the device includes a substrate, an intrinsic base region formed in the substrate, a continuous emitter region formed within the intrinsic base region, the emitter region having a plurality of substantially hexagonal shaped openings defined therein, and a plurality of extrinsic base regions formed in the substrate, wherein each of the extrinsic base regions is positioned within an area defined by one of the plurality of substantially hexagonal shaped openings.
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Dutta et al., “Influence of Device Geometry on DC, AC and SOA of High Speed HV Bipolar Transistors”.
Ho Hoang-Quan
Legerity Inc.
Nelms David
Williams Morgan & Amerson P.C.
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