Bipolar transistor with extrinsic stress layer

Details Bipolar transistor with extrinsic stress layer Bipolar transistor with extrinsic stress layer

2006-09-05

2006-09-05

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With base region having specified doping concentration...

C257S565000, C257SE29190

Reexamination Certificate

active

07102205

ABSTRACT:
A method of increasing mobility of charge carriers in a bipolar device comprises the steps of: creating compressive strain in the device to increase mobility of holes in an intrinsic base of the device; and creating tensile strain in the device to increase mobility of electrons in the intrinsic base of the device. The compressive and tensile strains are created by forming a stress layer in close proximity to the intrinsic base of the device. The stress layer is at least partially embedded in a base layer of the device, adjacent an emitter structure of the device. The stress layer has different lattice constant than the intrinsic base. Method and apparatus are described.

REFERENCES:
patent: 4875084 (1989-10-01), Tohyama
patent: 6465317 (2002-10-01), Marty
patent: 2003/0199153 (2003-10-01), Kovacic et al.
patent: 2004/0092085 (2004-05-01), Kanzawa et al.
patent: 2004/0198010 (2004-10-01), Koumoto et al.
patent: 2005/0035470 (2005-02-01), Ko et al.
patent: 2005/0104160 (2005-05-01), Ahmed et al.

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