Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Patent
1997-02-11
1998-12-15
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
257592, H01L 27082
Patent
active
058501010
ABSTRACT:
A bipolar transistor is provided whose emitter surrounds the base. The transistor has in some embodiments a high ratio of the emitter area to the base area and low collector and emitter resistances. Further, a transistor is provided in which a collector contact region is surrounded by the base. Consequently, a low collector resistance is obtained in some embodiments.
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Klivans Norman R.
National Semiconductor Corporation
Prenty Mark V.
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