Bipolar transistor with enhanced base transport

Details Bipolar transistor with enhanced base transport Bipolar transistor with enhanced base transport

2011-01-18

2011-01-18

Wilson, Allan R (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With base region having specified doping concentration...

C257SE29190

Reexamination Certificate

active

07872330

ABSTRACT:
A bipolar transistor includes a base layer design and a method for fabricating such a bipolar transistor that employ a built-in accelerating field focused on a base region adjacent to a collector, where minority carrier transport is otherwise retarded. The accelerating field of the base layer includes on average, a relatively low p-doping level in a first region proximate to the collector and a relatively high p-doping level in a second region proximate to an emitter. Alternatively, the accelerating field can be derived from band gap grading, wherein the grade of band gap in the first region is greater than the grade of band gap in the second region, and the average band gap of the first region is lower than that of the second region.

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