Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Lateral bipolar transistor structure
Reexamination Certificate
2007-07-03
2007-07-03
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Lateral bipolar transistor structure
C257S560000, C257S563000, C257S564000, C257S578000, C257S579000
Reexamination Certificate
active
10206055
ABSTRACT:
A modified bipolar transistor defined for providing a larger emitter current than a basic emitter current from a basic bipolar transistor is provided. The modified transistor has an improved emitter structure comprising plural divided sub-emitter regions electrically isolated and spatially separated from each other. The plural divided sub-emitter regions may typically have a uniform emitter size identical with a basic emitter size of the basic bipolar transistor. A set of the plural divided sub-emitter regions provides an intended emitter current distinctly larger than the basic emitter current by a highly accurate direct current amplification factor corresponding to an intended emitter-size magnification factor.
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Nadav Ori
NEC Electronics Corporation
Young & Thompson
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