Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
Patent
1993-04-07
1994-02-22
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With base region having specified doping concentration...
257554, 257559, 257586, 257588, H01L 2972, H01L 2712, H01L 29167
Patent
active
052890244
ABSTRACT:
A bipolar transistor having a base intrinsic region, collector region, and emitter region. The emitter region, collector region, and base intrinsic region each having at least a portion thereof adjacent to an oxide isolation region. The base intrinsic region having a diffusion compensation region therein abutting the oxide isolation region. The diffusion compensation region compensates for the intrinsic concentrations segregating during oxidation, and also compensates for oxide charge contribution to the base region. The additional dopant in the compensation region results in only a small increase in the desired BJT performance and adds minimal complexity in manufacturing. The invention results in the controlled placement of dopants near the "birds's beak" between the emitter and base providing I.sub.CEO leakage current reduction at the emitter edge without affecting the bulk of the active intrinsic base.
REFERENCES:
patent: 3648125 (1972-03-01), Peltzer
patent: 3962717 (1976-06-01), O'Brien
patent: 4082571 (1978-04-01), Graul et al.
patent: 4492008 (1985-01-01), Anantha et al.
patent: 4609568 (1986-09-01), Koh et al.
patent: 4617071 (1986-10-01), Vora
patent: 4764480 (1988-08-01), Vora
patent: 4769687 (1988-09-01), Nakazato et al.
patent: 4879252 (1989-11-01), Komatsu
patent: 4961102 (1990-10-01), Shideler et al.
patent: 4962053 (1990-10-01), Spratt et al.
patent: 4992843 (1991-02-01), Blossfeld et al.
patent: 5014107 (1991-05-01), Vora
patent: 5077227 (1991-12-01), Kameyama et al.
National Semiconductor Corporation
Ngo Ngan
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