Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With emitter region having specified doping concentration...
Reexamination Certificate
2011-03-22
2011-03-22
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With emitter region having specified doping concentration...
C257S197000
Reexamination Certificate
active
07911033
ABSTRACT:
This invention discloses a novel apparatus of fully depleted emitter so that the built-in potential between emitter and the base becomes lower and the charge storage between the emitter and base becomes small. This concept also applies to the diodes or rectifiers. With depleted junction, this results in very fast switching of the diodes and transistors. Another novel structure utilizes the strip base structure to achieve lower on resistance of the bipolar transistor. The emitter region of the strip base can be a normal emitter or depleted emitter.
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Cheng Intellectual Property Group
Menz Douglas M
Yu Ho-Yuan
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