Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-01-30
2007-01-30
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C438S637000, C257S079000
Reexamination Certificate
active
10905510
ABSTRACT:
A structure and method where C is incorporated into the collector region of a heterojunction bipolar device by a method which does not include C ion implantation are provided. In the present invention, C is incorporated into the collector by epitaxy in a perimeter trench etched into the collector region to better control the carbon profile and location. The trench is formed by etching the collector region using the trench isolation regions and a patterned layer over the center part of the collector as masks. Then, Si:C is grown using selective epitaxy inside the trench to form a Si:C region with sharp and well-defined edges. The depth, width and C content can be optimized to control and tailor the collector implant diffusion and to reduce the perimeter component of parasitic CCB.
REFERENCES:
patent: 5233215 (1993-08-01), Baliga
patent: 6534371 (2003-03-01), Coolbaugh et al.
H.J. Osten, et al., “Carbon Doped SiGe Heterojunction Bipolar Transistors for High Frequency Applications”, Institute for Semiconductor Physics, pp. 109-116, IEEE 1999.
Freeman Gregory G.
Khater Marwan H.
Krishnasamy Rajendran
Schonenberg Kathryn T.
Stricker Andreas D
Le Thao P.
Sabo, Esq. William D.
Scully , Scott, Murphy & Presser, P.C.
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