Bipolar transistor with base-collector-isolation without...

Details Bipolar transistor with base-collector-isolation without... Bipolar transistor with base-collector-isolation without...

2009-12-18

2011-11-29

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S336000, C257SE29174

Reexamination Certificate

active

08067290

ABSTRACT:
The disclosed invention provides a method for the fabrication of a bipolar transistor having a collector region comprised within a semiconductor body separated from an overlying base region by one or more isolation cavities (e.g., air gaps) filled with low permittivity gas. In particular, a multilayer base-collector dielectric film is deposited over the collector region. A base region is formed onto the multilayer dielectric film and is patterned to form one or more base connection regions. The multilayer dielectric film is selectively etched during a plurality of isotropic etch processes to allow for the formation of one or more isolation region between the base connection regions and the collector region, wherein the one or more isolation regions comprise cavities filled with a gas having a low dielectric constant (e.g., air). The resultant bipolar transistor has a reduced base-collector capacitance, thereby allowing for improved frequency properties (e.g., higher maximum frequency operation).

REFERENCES:
patent: 7071500 (2006-07-01), Miura et al.
patent: 2005/0212087 (2005-09-01), Akatsu et al.

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