Bipolar transistor with base charge controlled by back gate bias

Details Bipolar transistor with base charge controlled by back gate bias Bipolar transistor with base charge controlled by back gate bias

1994-09-14

1995-09-05

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Lateral bipolar transistor structure

257557, 257559, 257576, 257584, 257585, 257593, H01L 2702, H01L 2972

Patent

active

054481040

ABSTRACT:
A back gate bias voltage is applied to the underside of a lateral bipolar transistor to desensitize a portion of the collector-base depletion region to changes in the collector-base voltage. Emitter-collector current flows through an active base region bypassing the portion of the collector-base depletion region that remains sensitive to the collector bias. This allows for a control over the charge in the active base region by the back gate bias, generally independent of the collector-base bias. The transistor is preferably implemented in a silicon-on-insulator-on-silicon (SOIS) configuration, with the back gate bias applied to a doped silicon substrate. The base doping concentration and the thickness of the underlying insulator are preferably selected to produce an inversion layer in the base region adjacent the insulating layer, thereby reducing the collector access resistance.

REFERENCES:
patent: 4667393 (1987-05-01), Ferla et al.
patent: 4937648 (1990-06-01), Huang
patent: 4965872 (1990-10-01), Vasudev
Ifstrom et al., "A 150-V Multiple Up-Drain VDMOS, CMOS, and Bipolar Process in `Direct Bonded` Silicon on Insulator on Silicon", IEEE Electron Device Letters, vol. 13, No. 9, Sep. 1992, pp. 469-461.
Parke et al., "Deep Sub-Micron, Bipolar-MOS Hybrid Transistors Fabricated on SIMOX", IEEE SOI Conference, 1992.
Magnusson et al., "A Lateral Bipolar Transistor Concept on SOI Using a Self-Aligned Base Definition Technique", Microelectronic Engineering 15, 1991 pp. 341-344.

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