Bipolar transistor with base and emitter contact holes having sh

Details Bipolar transistor with base and emitter contact holes having sh Bipolar transistor with base and emitter contact holes having sh

1995-06-26

1997-01-14

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

259578, 259580, 259581, 259582, H01L 27082, H01L 23057

Patent

active

055942725

ABSTRACT:
An insulating film formed on a base region is patterned to form emitter contact holes and base contact holes arranged alternately in such a manner that those contact holes are short in the center portion and become longer toward the peripheral portions, and to form emitter regions which are aligned with the emitter contact holes. This structure can suppress the current concentration on the center portion of a transistor without using a ballast resistor, thus ensuring a high-output operation, and can improve the transfer gain. The elimination of such a ballast resistor results in an increased effective utilization area and a simplified fabrication.

REFERENCES:
patent: 5270568 (1993-12-01), Terashima

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