Bipolar transistor with abrupt potential discontinuity in collec

Details Bipolar transistor with abrupt potential discontinuity in collec Bipolar transistor with abrupt potential discontinuity in collec

1988-08-08

1990-09-18

Mintel, William

357 16, 357 90, 357 58, H01L 2972

Patent

active

049582089

ABSTRACT:
There is disclosed a heterojunction bipolar transistor comprising an emitter region having a first conductivity type, a base region having a second conductivity type opposite to the first conductivity type, and a collector region having a graded collector section formed of a first compound semiconductor material and a collector contact section formed of a second compound semiconductor material of the first conductivity type, and an emitter-base junction, a base-collector junction and an abrupt potential discontinuity are formed between the emitter region and the base region, between the base region and the graded collector section and between the graded collector section and the collector contact section, respectively, wherein the first compound semiconductor material is increased in bandgap from the base-collector junction toward the collector contact section and the second semiconductor material is smaller in bandgap at the abrupt junction than the first semiconductor material, so that the potential difference between the base region and the collector region is compensated by the abrupt potential discontinuity, thereby restricting the production of hot electrons.

REFERENCES:
patent: 4712121 (1987-12-01), Yokoyama
No author, "Graded Barrier in Tunneling Hot Electron Transfer Amplifiers," IBM Technical Disclosure Bulletin, vol. 31, No. 8, Jan. 1989, pp. 345-346.

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