Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Reexamination Certificate
2007-02-20
2007-02-20
Malsawma, Lex H. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
C257SE29030
Reexamination Certificate
active
10978775
ABSTRACT:
A double-polysilicon, self-aligned bipolar transistor has a collector region formed in a doped semiconductor substrate, an intrinsic counterdoped base formed on the surface of the substrate and a doped intrinsic emitter formed in the surface of the intrinsic base. An etch stop insulator layer overlies the intrinsic base layer above the collector. A base contact layer of a conductive material overlies the etch stop dielectric layer and the intrinsic base layer. A dielectric layer overlies the base contact layer. A wide window extends through the insulator layer and the base contact layer down to the insulator layer. An island or a peninsula is formed in the wide window leaving at least one narrowed window within the wide window, with sidewall spacers in either the wide window or the narrowed window. The narrowed windows are filled with doped polysilicon forming an extrinsic emitter with the intrinsic emitter formed below the extrinsic emitter in the surface of the intrinsic base.
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Greg Freeman et al., “SiGe HBT Performance and Reliability Trends through ftof 350 GHz”, Proc. IEEE Reliability Physics Symposium (Mar. 30, 2003).
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Freeman Gregory G.
Khater Marwan H.
Pagette Francois
Stricker Andreas D.
International Business Machines - Corporation
Jones II Graham S.
Malsawma Lex H.
Schnurmann H. Daniel
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