Bipolar transistor with a sidewall-diffused subcollector

Details Bipolar transistor with a sidewall-diffused subcollector Bipolar transistor with a sidewall-diffused subcollector

1990-05-24

1991-03-26

Mintel, William

357 35, 357 43, 357 59, H01L 2972

Patent

active

050033654

ABSTRACT:
A bipolar transistor with a subcollector diffused from a trench contact is disclosed. The bipolar transistor is formed by an n-type collector region disposed over a p-type substrate, or over a p-type epitaxial layer disposed over a p+ substrate. A trench is formed surrounding the transistor, with a dielectric layer formed on the sides and bottom of the trench. An opening is formed in the dielectric layer adjacent the collector region; the trench is filled with a dopant source such as heavily doped n-type polysilicon. During the diffusion of the base region from an implant, n-type dopant diffuses out from the filled trench through the opening, to form an n+ subcollector in the collector region. An emitter region, and an extrinsic base region, are then formed to complete the transistor. Additional disclosed embodiments include the use of an isolation structure to fill the trench on the side of the transistor adjacent the extrinsic base, so that collector-to-base capacitance is minimized. Additional disclosed embodiments also include formation of a p-n-p transistor with a similar diffused subcollector, and a transistor having an extrinsic base region similarly formed by diffusion from a filled trench.

REFERENCES:
patent: 3913124 (1975-10-01), Roberson
patent: 4673962 (1987-06-01), Chatterjee et al.
patent: 4696097 (1987-09-01), McLaughlin et al.
patent: 4733287 (1988-03-01), Bower
patent: 4784971 (1988-11-01), Chiu et al.
patent: 4792837 (1988-12-01), Zazzu
patent: 4824793 (1989-04-01), Richardson et al.
Berger, "Method of Producing a Lateral Transistor," IBM Techical Disclosure, Bulletin, vol. 23, No. 3, Aug. 1980, pp. 1089-1090.

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