Bipolar transistor with a particular silicon germanium alloy str

Details Bipolar transistor with a particular silicon germanium alloy str Bipolar transistor with a particular silicon germanium alloy str

1992-03-19

1994-06-21

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257197, 257591, 257592, H01L 31072, H01L 31109, H01L 27082, H01L 27102

Patent

active

053230310

ABSTRACT:
To eliminate misfit dislocation occurring in a hetero-interface and to provide a bipolar transistor capable of a high speed operation, the bipolar transistor is configured such that the energy band gap is progressively narrowing from part of an emitter layer towards part of a collector layer through a base layer.

REFERENCES:
patent: 4885614 (1989-12-01), Furukawa et al.

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