Bipolar transistor with a particular emitter structure

Details Bipolar transistor with a particular emitter structure Bipolar transistor with a particular emitter structure

1991-12-31

1994-06-21

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With emitter region having specified doping concentration...

257593, 257592, 257588, 257565, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

053230566

ABSTRACT:
In order to simplify the structure of a power amplifying transistor and improve its high-frequency characteristics, a base electrode (7b) and a collector electrode (7c) are formed on the surface of such a power amplifying transistor, while an emitter electrode (7e) is formed on its rear surface. Since it is possible to easily ground the emitter electrode (7e) and use the base and collector electrodes (7b, 7c) as an input and an output respectively, the structure is simplified and no wiring pattern is required, whereby high-frequency characteristics can be improved.

REFERENCES:
patent: 3244950 (1966-04-01), Ferguson
patent: 4160986 (1979-07-01), Johnson
patent: 4885623 (1989-12-01), Holm-Kennedy et al.
patent: 4956689 (1990-09-01), Yuan et al.

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