Bipolar transistor with a particular electrode structure

Details Bipolar transistor with a particular electrode structure Bipolar transistor with a particular electrode structure

1992-04-03

1993-12-28

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257586, 257571, 257565, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

052742652

ABSTRACT:
A semiconductor device and a method of manufacture thereof by which the device is formed without an epitaxial growth process are provided. The semiconductor device has low circuit resistance and is highly reliable due to a sufficient device strength. Although a base layer or other devices are formed in an N.sup.- type silicon layer, the process of epitaxial growth is eliminated, because the semiconductor substrate (2) consists entirely of the N.sup.- type silicon. Further, the substrate has a bottom recessed part (4) which extends near a base layer (21). A collector electrode (8) is attached to the bottom recessed part (4), allowing collector resistance to be reduced. Moreover, the substrate (2) is not formed thin throughout, partly provided with the bottom recessed part (4). As a result, the resulting semiconductor device holds a sufficient strength.

REFERENCES:
patent: 3777227 (1973-12-01), Krishna et al.
patent: 4857980 (1989-08-01), Hoeberechts
patent: 5084750 (1992-01-01), Adlerstein

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