Bipolar transistor with a particular base and collector regions

Details Bipolar transistor with a particular base and collector regions Bipolar transistor with a particular base and collector regions

1993-08-18

1994-12-20

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With base region having specified doping concentration...

257587, 257588, H01L 27082, H01L 2940

Patent

active

053748468

ABSTRACT:
A silicon film 9 and an N.sup.+ -type impurity region 9a are provided between a base region 11 and an epitaxial growth layer 3. A silicon oxide film 12 is provided on the inner sidewalls of an opening 16, and an N-type polycrystalline silicon film 13 and an emitter region 15 are provided in the region surrounded by the silicon oxide film 12.
The silicon film 9 is formed by means of a molecular beam epitaxy and the N-type impurity region 9a is formed prior to the formation of the base region 11 by means of ion implantation that uses a silicon oxide film 7 as the mask. As a result, it is possible to suppress the reduction in the cut-off frequency, and reduce the capacity between the base and the collector, so that a high speed operation of the bipolar transistor becomes possible.

REFERENCES:
patent: 3312881 (1967-04-01), Yu
patent: 4887145 (1989-12-01), Washio et al.

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