Bipolar transistor with a low saturation voltage

Details Bipolar transistor with a low saturation voltage Bipolar transistor with a low saturation voltage

2011-04-12

2011-04-12

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Emitter region feature

C257S197000, C257S565000

Reexamination Certificate

active

07923751

ABSTRACT:
A bipolar transistor with a specific area resistance less than about 500 mOhms·mm2comprises a first semiconductor region of a first conductivity type defining a collector region (2). A second semiconductor region of a second conductivity type defines a base region (3). A third semiconductor region of the first conductivity type defines an emitter region (4). A metal layer provides contacts (6, 7) to said base (3) and emitter regions (4). The metal layer has thickness greater than about 3 μm.

REFERENCES:
patent: 3678348 (1972-07-01), Reber et al.
patent: 4205332 (1980-05-01), Conti et al.
patent: 4236171 (1980-11-01), Shen
patent: 4516149 (1985-05-01), Wakui et al.
patent: 4717680 (1988-01-01), Piotrowski
patent: 4835588 (1989-05-01), Nawata et al.
patent: 5229313 (1993-07-01), Takata
patent: 5408124 (1995-04-01), Palara
patent: 6064080 (2000-05-01), Nakamura
patent: 6388272 (2002-05-01), Odekirk
patent: 7404249 (2008-07-01), Gardes et al.
patent: 2002/0024114 (2002-02-01), Sakamoto
patent: 2005/0269633 (2005-12-01), Singh
patent: 0 341 221 (1989-11-01), None
patent: 2 081 009 (1982-02-01), None
patent: 61-212061 (1986-09-01), None
patent: 62-244170 (1987-10-01), None
patent: 2003-218231 (2003-07-01), None
UK Search Report dated Jan. 30, 2004 for application No. GB 0318146.8.
Proceedings of 2001 International Symposium on Power Semiconductor Devices & ICs, Osaka—1.8 kV, 3.8 A Bipolar Junction Transistors in 4H-SiC—Sei-Hyung Ryu, Anant K. Agarwal, John W. Palmour, and Michael E. Levinshtein—pp. 37-40.
PCT International Search Report dated Sep. 2, 2004 for PCT/GB2004/003018.

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