Bipolar transistor with a GaAs substrate and a SiGe base or...

Details Bipolar transistor with a GaAs substrate and a SiGe base or... Bipolar transistor with a GaAs substrate and a SiGe base or...

2007-01-02

2007-01-02

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

Reexamination Certificate

active

11053548

ABSTRACT:
A bipolar transistor is provided which includes a GaAs substrate, an n-type collector region formed on the GaAs substrate, a p-type base region formed on the n-type collector region and having a p-type base layer of SiGe having a composition lattice-matched with the GaAs substrate, and an n-type emitter region formed on the p-type base region. A bipolar transistor may include a GaAs substrate, a collector region of a first conductivity type formed on the GaAs substrate and including a collector contact layer of the first conductivity type SiGe, which has a composition lattice-matched with the GaAs substrate, a base region of a second conductivity type formed on the collector region of the first conductivity type, and an emitter region of the first conductivity type formed on the base region of the second conductivity type.

REFERENCES:
patent: 5304816 (1994-04-01), Grinberg et al.
patent: 2-150032 (1990-06-01), None
patent: 04-267529 (1992-09-01), None
Masafumi Kawanaka, et al., “High-Gain Collector-Top Ge/GaAs Heterojunction Bipolar Transistors with a Base Layer Fabricated by Suppressing Ga Atom Diffusion at Ge/GaAs Heterojunctions”, Japanese Journal of Applied Physics, vol. 30, No. 8, Aug. 1991, pp. 1659-1663.

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