Bipolar transistor using emitter-base reverse bias carrier gener

Details Bipolar transistor using emitter-base reverse bias carrier gener Bipolar transistor using emitter-base reverse bias carrier gener

1991-07-15

1993-08-10

Larkins, William D.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

257589, H01L 2972

Patent

active

052352161

ABSTRACT:
A circuit for generating a negative voltage includes: a bipolar transistor including, a) an N type collector region, b) a P type base region, and c) an N type emitter region, the base region width between the emitter region and the collector region being less than about 5,000 angstroms and the dopant concentration of the base region being in the range of about 1-10.times.10.sup.18 atoms/cm.sup.3 ; means for applying a reference potential to the base region; and means for applying a bias potential to the emitter region so as to generate a negative output potential at the collector region. The circuit can likewise comprise a PNP bipolar transistor biased to generate a negative voltage. The circuit can be used on integrated circuit chips to provide a complementary voltage, thereby obviating the requirement for separate, complementary power supplies.

REFERENCES:
patent: 3571630 (1971-03-01), Widlar
patent: 4127860 (1978-11-01), Beelitz et al.
patent: 4131902 (1978-12-01), Kub
patent: 4163245 (1979-07-01), Kinoshita
patent: 4326208 (1982-04-01), Fang et al.
patent: 4435898 (1984-03-01), Gaur et al.
patent: 4577211 (1986-03-01), Bynum et al.
patent: 4825275 (1989-04-01), Tomassetti

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