Bipolar transistor structure with ultra small polysilicon...

Details Bipolar transistor structure with ultra small polysilicon... Bipolar transistor structure with ultra small polysilicon...

2005-02-08

2005-02-08

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S511000, C257S517000, C257S525000, C257S565000

Reexamination Certificate

active

06853017

ABSTRACT:
A bipolar transistor structure includes trench isolation dielectric material formed in a semiconductor substrate to define a substrate active device region. A collector region is formed beneath the surface of the active device region. A base region is formed in the active device region above the collector region and extends to the surface of the active device region. A layer of dielectric material is formed to extend at least partially over the trench isolation and over the surface of the base region. A layer of doped polysilicon is formed over the layer of dielectric material and extends over the edge of the layer of dielectric material and over the surface of the base region. The doped polysilicon is patterned to define a polysilicon emitter region that extends over the edge of the layer of dielectric material to provide an ultra-small emitter contact on the surface of the base region. Heating of the doped polysilicon causes dopant to diffuse into the polysilicon emitter contact through the surface of the base region beneath the polysilicon emitter contact. Dielectric sidewall spacers are formed on the sidewalls of the polysilicon emitter region to electrically isolate the polysilicon emitter sidewalls.

REFERENCES:
patent: 5061644 (1991-10-01), Yue et al.
patent: 5086016 (1992-02-01), Brodsky et al.
patent: 6001701 (1999-12-01), Carroll et al.
patent: 6124180 (2000-09-01), Chambers et al.
patent: 6271577 (2001-08-01), Havemann
patent: 20010013635 (2001-08-01), Kitahata

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