Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
Reexamination Certificate
2006-10-10
2006-10-10
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With base region having specified doping concentration...
C257SE21044
Reexamination Certificate
active
07119416
ABSTRACT:
The invention includes methods of fabricating a bipolar transistor that adds a silicon germanium (SiGe) layer or a third insulator layer of, e.g., high pressure oxide (HIPOX), atop an emitter cap adjacent the intrinsic base prior to forming a link-up layer. This addition allows for removal of the link-up layer using wet etch chemistries to remove the excess SiGe or third insulator layer formed atop the emitter cap without using oxidation. In this case, an oxide section (formed by deposition of an oxide or segregation of the above-mentioned HIPOX layer) and nitride spacer can be used to form the emitter-base isolation. The invention results in lower thermal cycle, lower stress levels, and more control over the emitter cap layer thickness, which are drawbacks of the first embodiment. The invention also includes the resulting bipolar transistor structure.
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Washio, K. et al., “A Selective-Epitaxial-Growth SiGe-Base HBT With SMI Electrodes Featuring 9.3-ps ECL-Gate Delray,” IEEE Transactions on Electron Devices, vol. 46, No. 7, Jul. 1999, pp. 1411-1416.
Adam Thomas N.
Chan Kevin K.
Joseph Alvin J.
Khater Marwan H.
Liu Qizhi
Cioffi James J.
Coleman W. David
Hoffman, Warnick & D'Alessandro
International Business Machines - Corporation
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