Bipolar transistor structure with reduced collector-to-substrate

Details Bipolar transistor structure with reduced collector-to-substrate Bipolar transistor structure with reduced collector-to-substrate

1992-02-18

1993-10-12

Hearn, Brian E.

Metal treatment

Barrier layer stock material, p-n type

437 31, 437 89, 257588, 148DIG11, 148DIG72, H01L 2900

Patent

active

052521435

ABSTRACT:
A pre-processed substrate structure for a semiconductor device. A subcollector layer is spaced apart from a substrate by a dielectric. A relatively small, lightly-doped epitaxial feed-through layer extends through the dielectric between the substrate and the subcollector. A transistor constructed over the subcollector has very low collector-to-substrate capacitance. A plurality of devices on a common substrate are electrically isolated from each other by channel stops formed in the substrate around each device.

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