Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1991-12-16
1993-06-22
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257538, 257536, 257510, 257516, H01L 2972, H01L 2712, H01L 2702, H01L 2904
Patent
active
052218570
ABSTRACT:
A polycrystalline silicon layer 9 for a base leading electrode is formed on an element forming region divided by an element isolating layer which is formed by burying a BPSG film 8 in a groove. A depression generated on the element isolating layer is filled with a PSG film 11 which is formed as a part of an interlayer insulating film on the surface of the device including the polycrystalline silicon layer 9 by the spin-coating method so that the upper surface of the device is flattened. A polycrystalline silicon layer 13 is provided on the element isolating layer as a resistor layer so that the resistor layer is disposed between the adjacent transistors. The area of a circuit block is reduced to achieve a high integration and reduction in parasitic capacitance. This enables the high speed operation.
REFERENCES:
patent: 5043786 (1991-08-01), Desilets et al.
patent: 5109262 (1992-04-01), Kadota et al.
patent: 5117273 (1992-05-01), Stark et al.
Fahmy Wael
Hille Rolf
NEC Corporation
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