Bipolar transistor structure having low saturation resistance

Details Bipolar transistor structure having low saturation resistance Bipolar transistor structure having low saturation resistance

1975-12-24

1977-09-06

Larkins, William D.

Metal treatment

Stock

Ferrous

357 36, 357 89, 357 90, 148175, 148187, H01L 2710

Patent

active

040472205

ABSTRACT:
A triple diffused interdigitated NPN transistor formed in an isolated N-epitaxial pocket of an otherwise standard NPN bipolar junction isolated integrated circuit. The N-type diffused collector pocket in the N-epitaxial layer lowers collector resistance of the triple diffused NPN device.

REFERENCES:
patent: 3460006 (1969-08-01), Strull
patent: 3665266 (1972-05-01), Drozdowicz et al.

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