Bipolar transistor structure for very high speed circuits and me

Details Bipolar transistor structure for very high speed circuits and me Bipolar transistor structure for very high speed circuits and me

1989-05-30

1989-12-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437162, 437228, 437233, 437193, 437158, 148DIG11, 148DIG124, 357 34, 156653, H01L 21265

Patent

active

048898236

ABSTRACT:
A bipolar transistor structure wherein the emitter zone is produced by outward diffusion from etching residues which are formed by deposition of conductive material and re-etching, with the etching residues forming part of the emitter terminal region. In addition to individual transistors, pairs of transistors having coupled emitters can also be produced and employed in hig precision differential amplifiers. Memory cells can also be produced which have low surface requirements, particularly due to the reproduceable attainment of emitter widths below one micron. Since the methods enable the production of completely self-aligned transistors, they can be implemented with straightforward steps which are largely independent of lithography. Emitter widths in the range of about 0.2 to 0.5 microns can be produced.

REFERENCES:
patent: 4190466 (1980-02-01), Bhattacharyya et al.
patent: 4481706 (1984-11-01), Roche
patent: 4483726 (1984-11-01), Isaac
patent: 4495010 (1985-01-01), Kranzer
patent: 4581319 (1986-04-01), Wieder et al.
patent: 4712125 (1987-12-01), Bhatia et al.
"High-Density, High-Performance Bipolar Technology," Jambotkar, IBM Technical Disclosure Bulletin, vol. 23, No. 12, May 1981.

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