Patent
1991-04-03
1992-05-05
Hille, Rolf
357 35, 357 34, 357 37, H01L 2702, H01L 2972, H01L 2900
Patent
active
051112698
ABSTRACT:
A N.sup.+ -type buried layer is formed at the surface of a P-type semiconductor substrate so as to correspond to the region in which a bipolar transistor is to be formed. Formed on the semiconductor substrate surface containing the buried layer portion is a P-type epitaxial layer, in which an N-type well is formed which extends from the layer's surface to the buried layer. In the well, a first diffusion layer extending from the well's surface to the buried layer is formed as the collector. Also formed in the well is a P-type second diffusion layer, in which P.sup.+ -type third and fourth diffusion layers are formed as a separate bases. An N.sup.+ -type fifth diffusion layer is formed as an emitter between the third and fourth diffusion layers. A collector electrode, a base electrode, and an emitter electrode are taken from the first, third, and fifth diffusion layers, respectively, so that the fourth and fifth diffusion layers are connected to each other by an interconnection.
REFERENCES:
patent: 4985739 (1991-01-01), Lapham et al.
S. M. Sze, "Semiconductor Devices Physics and Technology", 1985, pp. 334-340.
Fahmy Wael
Hille Rolf
Kabushiki Kaisha Toshiba
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