Bipolar transistor stabilized with electrical insulating element

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor

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257197, H01L 29737

Patent

active

060312556

ABSTRACT:
A semiconductor component of the heterojunction bipolar transistor type comprises, on a substrate, a collector, a base and a mesa-shaped emitter resting on the base. The bipolar transistor furthermore comprises electrically insulating elements in contact with the base and the flanks of the emitter mesa, said elements having a width of the same magnitude as the width of the mesa and providing the component with greater stability. Furthermore, a method for the manufacture of a component of this kind comprises in particular a step for the ion implantation of insulating ions through the constituent layer of the emitter mesa so as to define the electrically insulating elements.

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