Bipolar transistor stabilization structure

Details Bipolar transistor stabilization structure Bipolar transistor stabilization structure

1977-12-28

1980-11-25

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 34, 357 36, 357 86, 307237, H01L 2702

Patent

active

042361648

ABSTRACT:
A bipolar transistor structure consists of a standard structure and in addition consists of a low resistance-high impurity concentration region in the collector which contacts a nonactive portion of the base. The resistance between the base contact and the low resistance-high impurity concentration region of the collector, coupled with the capacitance between the two regions, results in the equivalent of a series R-C network between the base contact and the collector contact. The values of resistance and capacitance of this network are selected to insure "absolute" stability of the transistor when operated in a circuit.

REFERENCES:
patent: 3631311 (1971-12-01), Engbert
patent: 3766449 (1973-10-01), Bruchez
patent: 4047220 (1977-09-01), Ferro et al.
patent: 4143455 (1979-03-01), Schwabe et al.
patent: 4146905 (1979-03-01), Appels et al.

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