Bipolar transistor read only or read-write store with low impeda

Details Bipolar transistor read only or read-write store with low impeda Bipolar transistor read only or read-write store with low impeda

1981-08-06

1984-03-27

Fears, Terrell W.

Static information storage and retrieval

Read only systems

Semiconductive

365154, G11C 1140

Patent

active

044398425

ABSTRACT:
In a bipolar transistor storage array, the single emitter terminal of each transistor is connected to a bit line. Each bit line is connected to a sense amplifier that provides a low impedance connection to a current source or voltage reference point. The low impedance circuit helps to provide fast switching for a write operation and a noise immune storage operation. The emitter connection and the sense amplifier construction simplify the conversion of the array or part of the array to a read only storage function.

REFERENCES:
patent: 3618052 (1971-11-01), Kwei et al.
patent: 3909805 (1975-09-01), Touron et al.
patent: 3957008 (1977-04-01), Sheng
patent: 4078261 (1978-03-01), Millhollan et al.
"Beam-Lead Sealed-Junction Semiconductor Memory with Minimal Cell Complexity" by John Iwersen IEEE Journal of Solid State Circuits, No. 4, Dec. 1967, pp. 196-201.
Perhs et al., "Bit Line Constant Current Sources Switch for Read Only Store" IBM Tech. Dis. Bul., vol. 20, No. 11a, pp. 4412-4414, 4/78.

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