Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Lateral bipolar transistor structure
Patent
1995-11-15
1997-05-06
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Lateral bipolar transistor structure
257347, 257526, H01L 2701, H01L 2712, H01L 2900
Patent
active
056274017
ABSTRACT:
A back gate bias voltage is applied to the underside of a lateral bipolar transistor to desensitize a portion of the collector-base depletion region to changes in the collector-base voltage. Emitter-collector current flows through an active base region bypassing the portion of the collector-base depletion region that remains sensitive to the collector bias. This allows for a control over the charge in the active base region by the back gate bias, generally independent of the collector-base bias. The transistor is preferably implemented in a silicon-on-insulator-on-silicon (SOIS) configuration, with the back gate bias applied to a doped silicon substrate. The base doping concentration and the thickness of the underlying insulator are preferably selected to produce an inversion layer in the base region adjacent the insulating layer, thereby reducing the collector access resistance.
REFERENCES:
patent: 4667393 (1987-05-01), Ferla et al.
patent: 4937648 (1990-06-01), Huang
patent: 4965872 (1990-10-01), Vasudev
patent: 5327006 (1994-07-01), Beasom
Ifstrom et al., "A 150-V Multiple Up-Drain VDMOS, CMOS and Bipolar Process in `Direct Bonded` Silicon on Insulator on Silicon", IEEE Electron Device Letters, vol. 13, No. 9, Sep. 1992, pp. 460-461.
Parke et al., "Deep Sub-Micron, Bipolar-MSO Hybrid Transistors Fabricated on Simox", IEEE SOI Conference, 1992.
Magnusson et al., "A Lateral Bipolar Transistor Concept on SOI Using a Self-Aligned Base Definition Technique", Microelectronic Engineering 15, 1991, pp. 341-344.
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