Bipolar transistor on a semiconductor-on-insulator substrate

Details Bipolar transistor on a semiconductor-on-insulator substrate Bipolar transistor on a semiconductor-on-insulator substrate

1998-02-26

2000-02-22

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257588, 257593, 257565, 257517, H01L 2348

Patent

active

060283440

ABSTRACT:
A bipolar transistor formed on a SOI substrate has a buried collector layer underlying an emitter region and a collector contact region for connection thereof, both of which are made of a doped polysilicon film deposited in a removed portion of an oxide film etched by wet etching and a collector contact groove, respectively. By reducing the area of the buried collector layer, the bipolar transistor has excellent frequency characteristics in a high-frequency range.

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patent: 5731623 (1998-03-01), Ishimaru
patent: 5763931 (1998-06-01), Suiyama

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