Bipolar transistor MOS transistor hybrid semiconductor integrate

Details Bipolar transistor MOS transistor hybrid semiconductor integrate Bipolar transistor MOS transistor hybrid semiconductor integrate

1992-11-30

1995-01-03

Crane, Sara W.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307451, 307570, H03K 1902, H03K 1908, H03K 19084

Patent

active

053789415

ABSTRACT:
A high speed and low power consumption semiconductor integrated circuit device has a plurality of internal circuits each including circuit elements for performing a desired circuit operation, a plurality of input circuits for receiving external input signals and supplying the signals to the internal circuits and a plurality of output circuits for receiving the output signals from the internal circuits and supplying signals to an external circuit. Each of the internal circuits is primarily constructed by bipolar transistors and MOS transistors, and at least one of each of the input circuits and each of the output circuits is primarily constructed by bipolar transistors.

REFERENCES:
patent: 3541353 (1970-11-01), Seelbach et al.
patent: 4558234 (1985-12-01), Suzuki et al.

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