Bipolar transistor integrated circuit technology

Details Bipolar transistor integrated circuit technology Bipolar transistor integrated circuit technology

1988-08-31

1990-10-30

Mintel, William

357 16, 357 56, 357 35, H01L 2972

Patent

active

049672533

ABSTRACT:
An integrated circuit bipolar transistor is described wherein the relative semiconductor electrode areas are established by an electrode pedestal that includes a base contact positioning feature and wiring constraints are relaxed by a base pedestal that facilitates the positioning of contact wiring that is independent of contact location. A heterojunction bipolar transistor having a base area less than twice as large as the emitter area is described.

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Asbeck et al., "GaAs/(Ga, Al) As Heterojunction Bipolar Transistors with Buried Oxygen-Implanted Isolation Layers", IEEE Electron Device Letters, vol. EDL-5, No. 8, Aug. 1984, pp. 310-312.
Asbeck et al., "4.5 GHz Frequency Dividers Using GaAs/(GaAl) as Heterojunction Bipolar Transistors," 1984 IEEE International Solid-State Circuits Conference, Feb. 22, 1984, pp. 50-51, Digest of Technical Papers.
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